UnitedSiC has announced the addition of four new SiC FETs with what they claim to be the lowest RDS(on) in the industry. At an RDS(on) as low as 7mΩ, the SiC FETs are designed for high-powered applications, including electric vehicle (EV) converters, high-powered DC/DC converters, high-current battery chargers, and circuit breakers. The UF3C/SC SiC FET series is available in a single device rated at 650V with an RDS(on) at 7mΩ or three devices rated at 1200V with an RDS(on)​​​​​​​ at 9mΩ and 16mΩ. All four of the devices are available in a TO247 package. UnitedSiC CEO Chris Dries distills the three main things that power engineers care about in a FET: on-resistance, switching loss, and price. The anatomy and specifications of the new SiC FETs, as discussed below, are geared to meet each of these priorities.   The new SiC FETs were created by combining third-generation JFETs (Junction Gate Field-Effect Transistor) with a cascode-optimized silicon MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). By combining the two, UnitedSiC developers intend to increase the speed and efficiency of circuit designs while still allowing compatibility with such gate voltages as silicon ...